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Transistors
2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S
General purpose transistor (50V, 0.15A)
2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S
!Features 1) Low Cob. Cob=2.0pF (Typ.) 2) Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029 / 2SA933AS. !External dimensions (Units : mm)
(1)
2SC2412K
2SC4081
(1)
2SC4617
0.65 0.65
(2)
0.95 0.95 1.9
1.3
2.0
(1) (2)
0.2 0.5 0.5
(3)
0.4
(3)
0.3
1.6 2.8
2.1
0.8
0.2
0.15
1.6
0.7
0.9
0.15
0.2
1.25
0.3
(3)
0.55
0.15
0.8
1.1
0~0.1
0.3Min.
!Structure Epitaxial planar type NPN silicon transistor
Each lead has same dimensions
ROHM : SMT3 EIAJ : SC-59 JEDEC : SOT-346
(1) Emitter (2) Base (3) Collector
0~0.1
0.1Min.
0.1Min.
Each lead has same dimensions
ROHM : UMT3 EIAJ : SC-70 JEDEC : SOT-323
(1) Emitter (2) Base (3) Collector
0~0.1
ROHM : EMT3
(1) Emitter (2) Base (3) Collector
EIAJ : SC-75A JEDEC : SOT-416
Abbreviated symbol: B*
Abbreviated symbol: B*
Abbreviated symbol: B*
2SC5658
0.2 1.2 0.8
(2) (3) (1)
2SC1740S
40.2 20.2
30.2
0.2
1.2 0.32
0.4 0.4
0.8
0.22
(15Min.)
0.13 0~0.1
0.5
0.45+0.15 -0.05
0.15Max.
5
3Min.
2.5 +0.4 -0.1
0.5
0.45 +0.15 -0.05
(1) (2) (3)
ROHM : VMT3
(1) Base (2) Emitter (3) Collector
ROHM : SPT EIAJ : SC-72
(1) Emitter (2) Collector (3) Base
Abbreviated symbol: B*
* Denotes hFE
!Absolute maximum (Ta=25C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current 2SC2412K, 2SC4081 Collector power 2SC4617, 2SC5658 dissipation 2SC1740S Junction temperature Storage temperature PC Symbol VCBO VCEO VEBO IC Limits 60 50 7 0.15 0.2 0.15 0.3 Tj Tstg 150 -55~+150 C C W Unit V V V A
0.7
1.0
1.6
(2)
Transistors
!Electrical characteristics (Ta=25C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min. 60 50 7 - - 120 - - - Typ. - - - - - - - 180 2
2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S
Max. - - - 0.1 0.1 560 0.4 - 3.5 Unit V V V A A - V MHz pF IC=50A IC=1mA IE=50A VCB=60V VEB=7V VCE=6V, IC=1mA IC/IB=50mA/5mA VCE=12V, IE=-2mA, f=100MHz VCE=12V, IE=0A, f=1MHz Conditions
!Packaging specifications and hFE
Package Code Type 2SC2412K 2SC4081 2SC4617 2SC5658 2SC1740S hFE QRS QRS QRS QRS QRS - - - - - - - - - - Basic ordering unit (pieces) T146 3000 Taping T106 3000 - TL 3000 - - T2L 8000 - - - Bulk TP 5000 - - - -
hFE values are classified as follows :
Item hFE Q 120~270 R 180~390 S 270~560
!Electrical characterristic curves
50
100
VCE=6V
COLLECTOR CURRENT : IC (mA)
Ta=25C
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
20 10 5
Ta=100C
25C -55C
80
0.50mA mA 0.45 A 0.40m 0.35mA 0.30mA
10
Ta=25C
30A 27A
8
24A 21A
60
0.25mA 0.20mA
6
18A 15A
2 1 0.5 0.2 0.1 0
40
0.15mA 0.10mA
4
12A 9A
20
0.05mA IB=0A 0 0.4 0.8 1.2 1.6 2.0
2
6A 3A
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 BASE TO EMITTER VOLTAGE : VBE (V)
0 0
4
8
IB=0A 12
16
20
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1
Grounded emitter propagation characteristics
Fig.2
Grounded emitter output characteristics ( )
Fig.3
Grounded emitter output characteristics ( )
Transistors
500 Ta=25C
2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S
500 Ta=100C
VCE=5V 3V 1V
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
VCE=5V
0.5
Ta=25C
DC CURRENT GAIN : hFE
200
DC CURRENT GAIN : hFE
200
25C -55C
0.2 IC/IB=50 20 10
100
100
0.1 0.05
50
50
0.02
20 10 0.2
20 10 0.2
0.5 1
2
5
10 20
50 100 200
0.5 1
2
5
10 20
50 100 200
0.01 0.2
0.5 1
2
5
10
20
50 100 200
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs. collector current ( )
Fig.5 DC current gain vs. collector current ( )
Fig. 6 Collector-emitter saturation voltage vs. collector current
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
0.5
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
IC/IB=10
0.5
TRANSITION FREQUENCY : fT (MHz)
IC/IB=50
500
Ta=25C VCE=6V
0.2 Ta=100C 25C -55C
0.2 0.1 0.05
0.1 0.05
Ta=100C 25C -55C
200
0.02
100
0.02 0.01 0.2 0.5 1 2 5 10 20 50 100
0.01 0.2 0.5 1 2 5 10 20 50 100 200
50 -0.5 -1
-2
-5
-10 -20
-50 -100
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
EMITTER CURRENT : IE (mA)
Fig.7 Collector-emitter saturation voltage vs. collector current ( )
Fig.8 Collector-emitter saturation voltage vs. collector current ()
Fig.9 Gain bandwidth product vs. emitter current
COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF)
20
BASE COLLECTOR TIME CONSTANT : Cc*rbb' (ps)
10
Cib
Ta=25C f=1MHz IE=0A IC=0A
200
Ta=25C f=32MHZ VCB=6V
100
5
50
2
Co
20
b
1
0.2 0.5 1 2 5 10 20 50
10 -0.2 -0.5 -1 -2 -5 -10
COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V)
EMITTER CURRENT : IE (mA)
Fig.10
Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage
Fig.11 Base-collector time constant vs. emitter current
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0

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